A Two - Dimensional Dopant Diffusion Model for Polysilicon
نویسنده
چکیده
We present a two-dimensional simulation model for dopant diffusion in polysilicon, which includes dopant clustering in grain interiors as well as in grain boundaries. The grain growth model is coupled with the diffusion coefficient of the dopants and the process temperature. For all high dose implantation cases the trapping/emission mechanism in polysilicon and the grain growth are the major effects during subsequent thermal processes.
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